Datasheet4U Logo Datasheet4U.com

MMDJ3N03BJT DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES

MMDJ3N03BJT Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDJ3N03BJT/D Preliminary Data Sheet Plastic Power Transistors SO *8 for Surfa.

MMDJ3N03BJT Applications

* Designed for general purpose amplifier and low speed switching applications.
* Collector
* Emitter Sustaining Voltage
* VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
* High DC Current Gain
* hFE = 100 Vdc (Min) @ IC = 1.0 Adc = 90 Vdc (Min) @ IC = 3.0 Adc
* L

📥 Download Datasheet

Preview of MMDJ3N03BJT PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MMDJ3N03BJT
Manufacturer
Motorola
File Size
122.92 KB
Datasheet
MMDJ3N03BJT_MotorolaInc.pdf
Description
DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES

📁 Related Datasheet

  • MMD-04AB - Super low resistance (MAG LAYERS)
  • MMD-04BZ - Super low resistance (MAG LAYERS)
  • MMD-05BZ - Super low resistance (MAG LAYERS)
  • MMD-05CZ - Super low resistance (MAG LAYERS)
  • MMD-06AB - Super low resistance (MAG LAYERS)
  • MMD-06AE - Super low resistance (MAG LAYERS)
  • MMD-06AH - Super low resistance (MAG LAYERS)
  • MMD-06AH-100M-S1 - Super low resistance (MAG LAYERS)

📌 All Tags

Motorola MMDJ3N03BJT-like datasheet