Datasheet4U Logo Datasheet4U.com

MMDJ3P03BJT Datasheet - Motorola

MMDJ3P03BJT DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDJ3P03BJT/D Preliminary Data Sheet High DC Current Gain hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc Plastic Power Transistors SO 8 for Surface Mount Applications Collector Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc MMDJ3P03BJT Motorola Preferred Device DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES Low Collect.

MMDJ3P03BJT Datasheet (119.20 KB)

Preview of MMDJ3P03BJT PDF

Datasheet Details

Part number:

MMDJ3P03BJT

Manufacturer:

Motorola

File Size:

119.20 KB

Description:

Dual bipolar power transistor pnp silicon 30 volts 3 amperes.

📁 Related Datasheet

MMDJ3N03BJT DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES (Motorola)

MMD-04AB Super low resistance (MAG LAYERS)

MMD-04BZ Super low resistance (MAG LAYERS)

MMD-05BZ Super low resistance (MAG LAYERS)

MMD-05CZ Super low resistance (MAG LAYERS)

MMD-06AB Super low resistance (MAG LAYERS)

MMD-06AE Super low resistance (MAG LAYERS)

MMD-06AH Super low resistance (MAG LAYERS)

MMD-06AH-100M-S1 Super low resistance (MAG LAYERS)

MMD-06AH-1R0M-V1 Super low resistance (MAG LAYERS)

TAGS

MMDJ3P03BJT DUAL BIPOLAR POWER TRANSISTOR PNP SILICON VOLTS AMPERES Motorola

Image Gallery

MMDJ3P03BJT Datasheet Preview Page 2 MMDJ3P03BJT Datasheet Preview Page 3

MMDJ3P03BJT Distributor