MMDJ3P03BJT DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDJ3P03BJT/D Preliminary Data Sheet * High DC Current Gain * hFE = 14.

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Datasheet Specifications

Part number: MMDJ3P03BJT
Manufacturer: Motorola
File Size: 119.20 KB
Datasheet: MMDJ3P03BJT_MotorolaInc.pdf
Description: DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES

Applications

* Collector
* Emitter Sustaining Voltage
* VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc MMDJ3P03BJT Motorola Preferred Device DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES
* Low Collector
* Emitter Saturation Voltage
* VCE(sat) = 0.24 Vdc (M

MMDJ3P03BJT Distributors

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MMDJ3P03BJT DUAL BIPOLAR POWER TRANSISTOR PNP SILICON VOLTS AMPERES Motorola

Motorola MMDJ3P03BJT-like datasheet