MMPQ3467 Datasheet - Motorola

MMPQ3467 - Quad Memory Driver Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMPQ3467/D Quad Memory Driver Transistor PNP Silicon 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 MMPQ3467 Motorola Preferred Device 16 MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Power Dissipation @ TA = 25°C Derate above 25°C Power Dissipation @ TC = 25°C Derate above 25°C Operat

MMPQ3467 Features

* yo 135, Japan. 03

* 81

* 3521

* 8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852

* 26629298 4 ◊ Motorola Small

* Signal Transistors, FETs and Diodes Device Data

* MMPQ3467/D

* MM

MMPQ3467_MotorolaInc.pdf