* nce is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain
MMSF10N03Z Datasheet (196.28 KB)
MMSF10N03Z
Motorola
196.28 KB
Single tmos power mosfet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMSF10N03Z/D
Advance Information
Medium Power Surface Mount Products
MMSF10N03Z
Moto.
📁 Related Datasheet
MMSF10N03Z Power MOSFET (ON Semiconductor)
MMSF10N02Z SINGLE TMOS POWER MOSFET (Motorola)
MMSF10N02Z Power MOSFET (ON Semiconductor)
MMSF1308 Power MOSFET (ON Semiconductor)
MMSF1308R2 Power MOSFET (ON Semiconductor)
MMSF1310 Power MOSFET (ON Semiconductor)
MMSF2P02E SINGLE TMOS POWER MOSFET (Motorola)
MMSF3205 SINGLE TMOS POWER MOSFET (Motorola)
MMSF3300 SINGLE TMOS POWER MOSFET (Motorola)
MMSF3305 SINGLE TMOS POWER MOSFET (Motorola)
