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MMSF10N03Z - SINGLE TMOS POWER MOSFET

Motorola

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Datasheet Details

Part number	MMSF10N03Z
Manufacturer	Motorola
File Size	196.28 KB
Description	SINGLE TMOS POWER MOSFET
Datasheet	MMSF10N03Z_MotorolaInc.pdf

MMSF10N03Z Product details

Features

nce is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achieva.

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Published: May 9, 2005 |