MRF18090A
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field Effect Transistors
N- Channel Enhancement- Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications.
- GSM and EDGE Performances, Full Frequency Band Power Gain
- 13.5 d B (Typ) @ 90 Watts (CW) Efficiency
- 52% (Typ) @ 90 Watts (CW)
- Internally Matched, Controlled Q, for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
- Excellent Thermal Stability
- Characterized with Series Equivalent Large- Signal Impedance Parameters
MRF18090A MRF18090AS
- 1.88 GHz, 90 W, 26 V LATERAL N- CHANNEL RF POWER MOSFETS
CASE 465B- 03, STYLE 1...
