MRF18090A Datasheet (Motorola) - LATERAL N-CHANNEL RF POWER MOSFETS

MRF18090A, LATERAL N-CHANNEL RF POWER MOSFETS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090A/D The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz.

Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

To be used in class AB for GSM and EDGE cellular radio applications.

GSM and EDGE Performances, Full Frequency Band Power Gain 13.5

MRF18090A Features

* out limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, inc