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MRF18090BS - LATERAL N-CHANNEL RF POWER MOSFETs

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF18090B LATERAL N-CHANNEL RF POWER MOSFETs
MRF18090A LATERAL N-CHANNEL RF POWER MOSFETS
MRF18090AS LATERAL N-CHANNEL RF POWER MOSFETS
MRF18030ALR3 RF Power Field Effect Transistors
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. • GSM and EDGE Performances, Full Frequency Band Power Gain — 13.5 dB (Typ) @ 90 Watts (CW) Efficiency — 45% (Typ) @ 90 Watts (CW) • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness www.DataSheet4U.