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MRF18090B - LATERAL N-CHANNEL RF POWER MOSFETs

Download the MRF18090B datasheet PDF. This datasheet also covers the MRF18090BS variant, as both devices belong to the same lateral n-channel rf power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • lication or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary i.

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Note: The manufacturer provides a single datasheet file (MRF18090BS_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF18090BR3 LATERAL N-CHANNEL RF POWER MOSFETs Freescale Semiconductor
MRF18090BSR3 LATERAL N-CHANNEL RF POWER MOSFETs Freescale Semiconductor
MRF18090AR3 RF Power Field Effect Transistor Freescale Semiconductor
MRF18030BLR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor
MRF18030BLSR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF18090BS LATERAL N-CHANNEL RF POWER MOSFETs
MRF18090A LATERAL N-CHANNEL RF POWER MOSFETS
MRF18090AS LATERAL N-CHANNEL RF POWER MOSFETS
MRF18030ALR3 RF Power Field Effect Transistors
MRF18030ALSR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. • GSM and EDGE Performances, Full Frequency Band Power Gain — 13.5 dB (Typ) @ 90 Watts (CW) Efficiency — 45% (Typ) @ 90 Watts (CW) • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness www.DataSheet4U.