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MRF18090BSR3 - LATERAL N-CHANNEL RF POWER MOSFETs

Download the MRF18090BSR3 datasheet PDF. This datasheet also covers the MRF18090BR3 variant, as both devices belong to the same lateral n-channel rf power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Internally Matched for Ease of Use.
  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection www. DataSheet4U. com.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF18090BR3 MRF18090BSR3 1.90 - 1.99 GHz, 90 W, 26 V LAT.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF18090BR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF18090BS LATERAL N-CHANNEL RF POWER MOSFETs Motorola
MRF18090B LATERAL N-CHANNEL RF POWER MOSFETs Motorola
MRF18090A LATERAL N-CHANNEL RF POWER MOSFETS Motorola
MRF18090AS LATERAL N-CHANNEL RF POWER MOSFETS Motorola
MRF18030ALR3 RF Power Field Effect Transistors Motorola

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF18090BR3 LATERAL N-CHANNEL RF POWER MOSFETs
MRF18090AR3 RF Power Field Effect Transistor
MRF18030BLR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF18030BLSR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF18060ALR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. • GSM and EDGE Performances, Full Frequency Band Power Gain — 13.5 dB (Typ) @ 90 Watts (CW) Efficiency — 45% (Typ) @ 90 Watts (CW) • Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection www.DataSheet4U.