Datasheet4U Logo Datasheet4U.com

MRF18090BSR3 Datasheet Lateral N-channel Rf Power MOSFETs

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. • GSM and EDGE Performances, Full Frequency Band Power Gain — 13.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Internally Matched for Ease of Use.
  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection www. DataSheet4U. com.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF18090BR3 MRF18090BSR3 1.90 - 1.99 GHz, 90 W, 26 V LAT.

MRF18090BSR3 Distributor & Price

Compare MRF18090BSR3 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF18090BR3 LATERAL N-CHANNEL RF POWER MOSFETs
MRF18090AR3 RF Power Field Effect Transistor
MRF18030BLR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF18030BLSR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF18060ALR3 RF Power Field Effect Transistors
MRF18085ALSR3 RF Power Field Effect Transistors
MRF18085AR3 RF Power Field Effect Transistors
MRF1513NT1 RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET
MRF1517NT1 RF Power Field Effect Transistor
MRF1550FNT1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs