MRF18090AR3
MRF18090AR3 is RF Power Field Effect Transistor manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
Document Number: MRF18090A Rev. 7, 5/2006
RF Power Field Effect Transistor
- Channel Enhancement
- Mode Lateral MOSFET
Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio .. applications.
- GSM and GSM EDGE Performances, Full Frequency Band Power Gain
- 13.5 dB (Typ) @ 90 Watts CW Efficiency
- 52% (Typ) @ 90 Watts CW
- Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power Features
- Internally Matched for Ease of Use
- High Gain, High Efficiency and...
