MRF18030BLR3

MRF18030BLR3 is RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs manufactured by Freescale Semiconductor.

MRF18030BLR3 Datasheet

Part number	MRF18030BLR3
Download	MRF18030BLR3 Datasheet (PDF)
File Size	373.24 KB
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF18030BLR3 Distributor

MRF18030BLR3 Description

Freescale Semiconductor Technical Data Document Number: 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

MRF18030BLR3 Key Features

Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Low Gold Plating Thickness on Leads, 40μ″ Nominal
RoHS pliant
In Tape and Reel. R3 Suffix = 250 Units per 32 mm,13 inch Reel
CHANNEL RF POWER MOSFETs
04, STYLE 1 NI

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