MRF18030BLR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Product Overview

Freescale Semiconductor

Part number	MRF18030BLR3
Manufacturer	Freescale Semiconductor
File Size	373.24 KB
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Datasheet	MRF18030BLR3 Datasheet
Additional preview pages of the MRF18030BLR3 datasheet.

Internally Matched for Ease of Use.
High Gain, High Efficiency and High Linearity.
Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm,13 inch Reel. MRF18030BLR3 MRF18030BLSR3 1930- 1990 MHz, 30 W, 26 V GSM/GSM EDGE.

📁 Similar Datasheet

MRF18030BR3 - THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR (Motorola)
MRF18030BSR3 - THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR (Motorola)
MRF18030ALR3 - RF Power Field Effect Transistors (Motorola)
MRF18030ALSR3 - RF Power Field Effect Transistors (Motorola)
MRF18060A - RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF18060ALSR3 - RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF18060AR3 - RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF18060ASR3 - RF POWER FIELD EFFECT TRANSISTORS (Motorola)

Other Datasheets by Freescale Semiconductor

MRF18030BLSR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF18060ALR3 - RF Power Field Effect Transistors
MRF18085ALSR3 - RF Power Field Effect Transistors
MRF18085AR3 - RF Power Field Effect Transistors
MRF18090AR3 - RF Power Field Effect Transistor
MRF18090BR3 - LATERAL N-CHANNEL RF POWER MOSFETs

Published: Feb 15, 2007 |