Overview: www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF18030B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 - 1990 MHz.
| Part number | MRF18030BLR3 |
|---|---|
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| File Size | 373.24 KB |
| Description | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| Datasheet | MRF18030BLR3_FreescaleSemiconductor.pdf |
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