MRF18030BLSR3 Overview
Freescale Semiconductor Technical Data Document Number: 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
MRF18030BLSR3 Key Features
- Internally Matched for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Excellent Thermal Stability
- Low Gold Plating Thickness on Leads, 40μ″ Nominal
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 32 mm,13 inch Reel
- CHANNEL RF POWER MOSFETs
- 04, STYLE 1 NI