MRF18030BLSR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

This page provides the datasheet information for the MRF18030BLSR3, a member of the MRF18030BLR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs family.

Product Overview

Freescale Semiconductor

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Datasheet Details

Part number	MRF18030BLSR3
Manufacturer	Freescale Semiconductor
File Size	373.24 KB
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Datasheet	MRF18030BLSR3 Datasheet
Additional preview pages of the MRF18030BLSR3 datasheet.

MRF18030BLSR3 Product details

Features

Internally Matched for Ease of Use.
High Gain, High Efficiency and High Linearity.
Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm,13 inch Reel. MRF18030BLR3 MRF18030BLSR3 1930- 1990 MHz, 30 W, 26 V GSM/GSM EDGE.

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Published: Feb 15, 2007 |