MRF18060ALR3

MRF18060ALR3 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.

MRF18060ALR3 Datasheet

Part number	MRF18060ALR3
Download	MRF18060ALR3 Datasheet (PDF)
File Size	428.98 KB
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors

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MRF18060ALR3 Distributor

MRF18060ALR3 Description

Freescale Semiconductor Technical Data Document Number: 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

MRF18060ALR3 Key Features

Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal
RoHS pliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel
CHANNEL RF POWER MOSFETs
06, STYLE 1 NI

MRF18060ALR3 Applications

PCS/cellular radio and WLL applications. Specified for GSM 1805

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