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MRF18090BR3 Datasheet Lateral N-channel Rf Power MOSFETs

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. • GSM and EDGE Performances, Full Frequency Band Power Gain — 13.

Key Features

  • Internally Matched for Ease of Use.
  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection www. DataSheet4U. com.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF18090BR3 MRF18090BSR3 1.90 - 1.99 GHz, 90 W, 26 V LAT.

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