MRF18090BR3
MRF18090BR3 is LATERAL N-CHANNEL RF POWER MOSFETs manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
Document Number: MRF18090B Rev. 7, 5/2006
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications.
- GSM and EDGE Performances, Full Frequency Band Power Gain
- 13.5 dB (Typ) @ 90 Watts (CW) Efficiency
- 45% (Typ) @ 90 Watts (CW)
- Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power Features
- Internally Matched for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated...
