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MRF18090A - LATERAL N-CHANNEL RF POWER MOSFETS

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  • out limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF18090AS LATERAL N-CHANNEL RF POWER MOSFETS
MRF18090B LATERAL N-CHANNEL RF POWER MOSFETs
MRF18090BS LATERAL N-CHANNEL RF POWER MOSFETs
MRF18030ALR3 RF Power Field Effect Transistors
MRF18030ALSR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. • GSM and EDGE Performances, Full Frequency Band Power Gain — 13.