MRF185
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
The RF MOSFET Line
85 WATTS, 1.0 GHz 28 VOLTS LATERAL N- CHANNEL BROADBAND RF POWER MOSFET
RF POWER Field-Effect Transistor
N- Channel Enhancement- Mode Lateral MOSFET
- High Gain, Rugged Device
- Broadband Performance from HF to 1 GHz
- Bottom Side Source Eliminates DC Isolators, Reducing mon Mode Inductances
G G S (FLANGE)
D CASE 375B- 02, STYLE 2
MAXIMUM RATINGS
Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Total Device Dissipation @ TC = 25°C Derate above 25°C Symbol VDSS VGS Tstg TJ PD Value 65 ± 20
- 65 to +150 200 250 1.45 Unit Vdc Vdc °C °C Watts W/°C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.7 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain- Source Breakdown Voltage (VGS = 0...
