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MRF186 - The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR

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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF186/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 960 MHz, 28 Volts Output Power — 120 Watts PEP Power Gain — 11 dB Efficiency — 30% Intermodulation Distortion — –28 dBc • Excellent Thermal Stability • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW MRF186 1.
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