MRF186
Key Features
- Guaranteed Performance @ 960 MHz, 28 Volts Output Power — 120 Watts PEP Power Gain — 11 dB Efficiency — 30% Intermodulation Distortion — –28 dBc
- Excellent Thermal Stability
- Part: MRF186
- Description: The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR
- Category: MOSFET
- Manufacturer: Motorola Semiconductor
- Size: 948.80 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| MRF18060BLR3 | NXP Semiconductors | RF Power Field Effect Transistor |
| MRF18060BLSR3 | NXP Semiconductors | RF Power Field Effect Transistor |
| MRF18090BR3 | Freescale Semiconductor | LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF18030BLR3 | Freescale Semiconductor | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF18030BLSR3 | Freescale Semiconductor | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF18090AR3 | Freescale Semiconductor | RF Power Field Effect Transistor |
| MRF18060ALR3 | Freescale Semiconductor | RF Power Field Effect Transistors |
| MRF18090BSR3 | Freescale Semiconductor | LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF18085AR3 | Freescale Semiconductor | RF Power Field Effect Transistors |
| MRF18085ALSR3 | Freescale Semiconductor | RF Power Field Effect Transistors |