Datasheet Summary
Freescale Semiconductor Technical Data
RF Power Field Effect Transistor
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN
- PCS/cellular radio and WLL applications. Specified for GSM 1930
- 1990 MHz.
- GSM Performance, Full Frequency Band (1930
- 1990 MHz) Power Gain
- 13 dB (Typ) @ 60 Watts CW Efficiency
- 45% (Typ) @ 60 Watts CW
- Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW Output Power
Features
- Internally Matched for Ease of Use
- High Gain, High Efficiency and High Linearity
-...