Datasheet4U Logo Datasheet4U.com

MRF18060BLR3 - RF Power Field Effect Transistor

Key Features

  • Internally Matched for Ease of Use.
  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRF18060BLSR3 RF Power Field Effect Transistors Motorola
MRF18060B RF Power Field Effect Transistors Motorola
MRF18060BR3 RF Power Field Effect Transistors Motorola
MRF18060BS RF Power Field Effect Transistors Motorola
MRF18060BSR3 RF Power Field Effect Transistors Motorola

Other Datasheets by NXP Semiconductors

Part Number Description
MRF18060BLSR3 RF Power Field Effect Transistor
MRF101AN RF Power LDMOS Transistors
MRF101BN RF Power LDMOS Transistors
MRF13750H RF Power LDMOS Transistors
MRF13750HS RF Power LDMOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz.