MRF186
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field-Effect Transistor
N- Channel Enhancement- Mode Lateral MOSFET
Designed for broadband mercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large- signal, mon source amplifier applications in 28 volt base station equipment.
- Guaranteed Performance @ 960 MHz, 28 Volts Output Power
- 120 Watts PEP Power Gain
- 11 d B Efficiency
- 30% Intermodulation Distortion
- - 28 d Bc
- Excellent Thermal Stability
- 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW
1.0 GHz, 120 W, 28 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFET
CASE 375B- 04, STYLE 1 NI- 860
ARCHIVED 2005
MAXIMUM RATINGS (2)
Rating Drain- Source Voltage Drain- Gate Voltage (RGS = 1 MΩ) Gate- Source Voltage Drain Current
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