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MRF186 Datasheet - Motorola

MRF186 The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF186/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large signal, common source amplifier applications in 28 volt base station equipmen.

MRF186 Features

* MENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.085 0.115 0.42

MRF186 Datasheet (948.80 KB)

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Datasheet Details

Part number:

MRF186

Manufacturer:

Motorola

File Size:

948.80 KB

Description:

The rf mosfet line rf power field-effect transistor.

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MRF186 The MOSFET Line POWER FIELD-EFFECT TRANSISTOR Motorola

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