MRF186 The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR

Motorola

MRF186 Description

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC.2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF186/D The RF MOSFET Line RF Power .

MRF186 Features

* MENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.085 0.115 0.42

MRF186 Applications

* with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large
* signal, common source amplifier applications in 28 volt base station equipment.
* Guaranteed Performance @ 960 MHz, 28 Volts Output Power
* 120 Watts PEP P

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Datasheet Details

Part number: MRF186
Manufacturer: Motorola
File Size: 948.80 KB
Datasheet: MRF186_Motorola.pdf
Description: The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR

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The MOSFET Line POWER FIELD-EFFECT TRANSISTOR Motorola

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