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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Dual Switching Diode Common Cathode
MSD6100
Anode 1
2 Anode
1 2 3
3 Cathode
CASE 29–04, STYLE 3 TO–92 (TO–226AA)
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current (Pulse Width = 10 µsec) Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VR IF IFM(surge) PD(1) TJ, Tstg(1) Value 100 200 500 625 5.0 – 55 to +135 Unit Vdc mAdc mAdc mW mW/°C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Breakdown Voltage (I(BR) = 100 µAdc) Reverse Current (VR = 100 Vdc) (VR = 50 Vdc) (VR = 50 Vdc, TA = 125°C) Forward Voltage (IF = 1.
MSD6100 Datasheet
