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NPN General Purpose Amplifier Transistors Surface Mount
COLLECTOR 3
MSD601–RT1 MSD601–ST1
3
1
2 BASE
1 EMITTER
CASE
2
MAXIMUM RATINGS (T A = 25°C)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current–Continuous Collector Current–Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC I C(P) Symbol PD TJ T stg Value 60 50 7.0 100 200 Max 200 150 –55 ~ +150 Unit Vdc Vdc Vdc mAdc mAdc Unit mW °C °C Symbol V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CEO hFE1 hFE2 VCE(sat) Min 50 60 7.0 — — 210 290 90 —
318D–03, STYLE1 SC–59
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristic Collector-Emitter Breakdown Voltage (IC = 2.
MSD601-RT1 Datasheet
