MTD3055V - TMOS POWER FET
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD3055V/D TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation
MTD3055V Features
* of TMOS V
* On
* resistance Area Product about One
* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
* FET Predecessors Features Common to TMOS V and TMOS E
* FETS
* Avalanche Energy Specified
