MTD3055V Datasheet - Motorola

MTD3055V TMOS POWER FET

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD3055V/D TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation.

MTD3055V Features

* of TMOS V

* On

* resistance Area Product about One

* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

* Faster Switching than E

* FET Predecessors Features Common to TMOS V and TMOS E

* FETS

* Avalanche Energy Specified

MTD3055V Datasheet (206.04 KB)

MTD3055V Datasheet Preview — Preview of MTD3055V PDF

Datasheet Details

Part number:

MTD3055V

Manufacturer:

Motorola

File Size:

206.04 KB

Description:

Tmos power fet.

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TAGS

MTD3055V TMOS POWER FET Motorola

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