* equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG
* VGSP)] td(off) = RG Ciss In (VGG/VGSP) 1200 VDS = 0 V 1000 C, CAPACITANCE (pF) 800 600 400 Crss Ciss VGS = 0 V TJ = 25°C Ciss Coss 200 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 GATE
* TO
MTD8N06E Datasheet (173.09 KB)
MTD8N06E
Motorola
173.09 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD8N06E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mo.
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