MTD8N06E TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD8N06E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mo.

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Datasheet Specifications

Part number: MTD8N06E
Manufacturer: Motorola
File Size: 173.09 KB
Datasheet: MTD8N06E_Motorola.pdf
Description: TMOS POWER FET

Features

* equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG
* VGSP)] td(off) = RG Ciss In (VGG/VGSP) 1200 VDS = 0 V 1000 C, CAPACITANCE (pF) 800 600 400 Crss Ciss VGS = 0 V TJ = 25°C Ciss Coss 200 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 GATE
* TO

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected www. DataSheet4U. com voltage transients.
* Avalanche E

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MTD8N06E TMOS POWER FET Motorola

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