Part number:
MTD8N06E
Manufacturer:
Motorola
File Size:
173.09 KB
Description:
Tmos power fet.
Datasheet Details
Part number:
MTD8N06E
Manufacturer:
Motorola
File Size:
173.09 KB
Description:
Tmos power fet.
MTD8N06E, TMOS POWER FET
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD8N06E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain to source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
MTD8N06E Features
* equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG
* VGSP)] td(off) = RG Ciss In (VGG/VGSP) 1200 VDS = 0 V 1000 C, CAPACITANCE (pF) 800 600 400 Crss Ciss VGS = 0 V TJ = 25°C Ciss Coss 200 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 GATE
* TO
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