* 2 A TJ = 25°C 20 10 0 10 60 1000 VDD = 30 V ID = 12 A VGS = 5 V TJ = 25°C t, TIME (ns) tr tf td(off) 100 td(on) VDS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) 10 1 10 RG, GATE RESISTANCE (OHMS) 100 Figure 8. Gate
* To
* Source and Drain
* To
* Source Voltage versus T
MTP12N06EZL Datasheet (222.11 KB)
MTP12N06EZL
Motorola
222.11 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP12N06EZL/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP12N06EZL .
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