MTP12N06EZL Datasheet (Motorola)

MTP12N06EZL, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP12N06EZL/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP12N06EZL N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a gate to source zener diode designed for 4 kV ESD protection (human body model).

MTP12N06EZL Features

* 2 A TJ = 25°C 20 10 0 10 60 1000 VDD = 30 V ID = 12 A VGS = 5 V TJ = 25°C t, TIME (ns) tr tf td(off) 100 td(on) VDS , DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) 10 1 10 RG, GATE RESISTANCE (OHMS) 100 Figure 8. Gate

* To

* Source and Drain

* To

* Source Voltage versus T