* >
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTP16N25E VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) 12 QT 9 Q1 6 Q2 100 VGS 150 200 1000 VDD = 250 V ID = 16 A VGS = 10 V TJ = 25°C tr td(
MTP16N25E Datasheet (222.54 KB)
MTP16N25E
Motorola
222.54 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP16N25E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP16N.
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