MTP16N25E Datasheet (Motorola)

MTP16N25E, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP16N25E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP16N25E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.

The new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low voltage, high speed switc

MTP16N25E Features

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* SOURCE OR DRAIN

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* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTP16N25E VGS, GATE

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* SOURCE VOLTAGE (VOLTS) 12 QT 9 Q1 6 Q2 100 VGS 150 200 1000 VDD = 250 V ID = 16 A VGS = 10 V TJ = 25°C tr td(