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MTP16N25E TMOS POWER FET

MTP16N25E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP16N25E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP16N.

MTP16N25E Features

* >
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTP16N25E VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) 12 QT 9 Q1 6 Q2 100 VGS 150 200 1000 VDD = 250 V ID = 16 A VGS = 10 V TJ = 25°C tr td(

MTP16N25E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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Datasheet Details

Part number
MTP16N25E
Manufacturer
Motorola
File Size
222.54 KB
Datasheet
MTP16N25E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTP16N25E-like datasheet