MTP2P50E Datasheet (Motorola) - TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS

MTP2P50E, TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2P50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP2P50E Motorola Preferred Device P Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and com

MTP2P50E Features

* . Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1800 1600 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25°C 1000 VGS = 0 V TJ = 25°C Ciss C, CAPACITANCE (pF) 100 Coss 10 Crss Ciss Crss Coss