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MTP2P50E TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS

MTP2P50E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2P50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP2P50.

MTP2P50E Features

* . Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1800 1600 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25°C 1000 VGS = 0 V TJ = 25°C Ciss C, CAPACITANCE (pF) 100 Coss 10 Crss Ciss Crss Coss

MTP2P50E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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Datasheet Details

Part number
MTP2P50E
Manufacturer
Motorola
File Size
231.00 KB
Datasheet
MTP2P50E_Motorola.pdf
Description
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS

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TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS Motorola
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