MTP2P50E TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2P50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP2P50.

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Datasheet Specifications

Part number: MTP2P50E
Manufacturer: Motorola
File Size: 231.00 KB
Datasheet: MTP2P50E_Motorola.pdf
Description: TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS

Features

* . Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 1800 1600 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25°C 1000 VGS = 0 V TJ = 25°C Ciss C, CAPACITANCE (pF) 100 Coss 10 Crss Ciss Crss Coss

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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MTP2P50E TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS Motorola

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