S12MEBIV3
Motorola
2.03 MB
Mc9s12dt128 device user guide v02.09.
DOCUMENT NUMBER 9S12DT128DGV2/D
MC9S12DT128 Device User Guide V02.09 Covers also MC9S12DT128E, MC9S12DG128E, MC9S12DJ128E, MC9S12DG128, MC9S12DJ128, .
* Corrected KWP5 pin name in Fig 2-1 112LQFP pin assignments Corrected pull resistor CTRL/reset states for PE7 and PE4-PE0 in Table 2.1 “Signal Properties” Mentioned “S12LRAE” bootloader in Flash section 17 Corrected footnote on clamp of TEST pin under Table A-1 “Absolute Maximum Ratings” Corrected m
📁 Related Datasheet
S12MEBIV3D - MC9S12DT128 Device User Guide V02.09
(Motorola)
DOCUMENT NUMBER 9S12DT128DGV2/D
MC9S12DT128 Device User Guide V02.09 Covers also MC9S12DT128E, MC9S12DG128E, MC9S12DJ128E, MC9S12DG128, MC9S12DJ128, .
S12ME1 - European Safety Standard Approved/ Long Creepage Distance Type Photothyristor Coupler
(Sharp Electrionic Components)
S12ME1/S12ME1F
S12ME1/S12ME1F
s Features
1. Internal insulation distance : 0.4mm or more 2. Creepage distance : 8mm or more Space distance : 5mm or m.
S12ME1F - European Safety Standard Approved/ Long Creepage Distance Type Photothyristor Coupler
(Sharp Electrionic Components)
S12ME1/S12ME1F
S12ME1/S12ME1F
s Features
1. Internal insulation distance : 0.4mm or more 2. Creepage distance : 8mm or more Space distance : 5mm or m.
S12MD1 - Photothyristor Coupler
(Sharp Electrionic Components)
S12MD1V/S12MD3
S12MD1V/S12MD3
s Features
1. High RMS ON-state current ( IT : MAX. 200mA rms ) 2. High repetitive peak OFF-state voltage ( VDRM : MIN..
S12MD1V - Photothyristor Coupler
(Sharp Electrionic Components)
S12MD1V/S12MD3
S12MD1V/S12MD3
s Features
1. High RMS ON-state current ( IT : MAX. 200mA rms ) 2. High repetitive peak OFF-state voltage ( VDRM : MIN..
S12MD2 - HIGH NOISE-REDUCTLON/HIGH DENSLTY MOUNTING TYPE PHOTOTHYRISTER COUPLER
(Sharp Electrionic Components)
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