Datasheet Specifications
- Part number
- TP33N10E
- Manufacturer
- Motorola
- File Size
- 195.47 KB
- Datasheet
- TP33N10E_Motorola.pdf
- Description
- MTP33N10E
Description
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MTP33N10E/D Designer's TMOS E-FET .™ Power Field Effect Transisto.
Features
* load; however, snubbing reduces switching losses. 5000 4500 4000 C, CAPACITANCE (pF) 3500 3000 2500 2000 1500 1000 500 0 10 5 Ciss Crss VDS = 0 V VGS = 0 V TJ = 25°C Ciss Coss Crss 0 VGS VDS 5 10 15 20 25 GATEApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.TP33N10E Distributors
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