SLD100N03T Datasheet - Msemitek

SLD100N03T 30V N-Channel MOSFET

This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Application PWM Application L.

SLD100N03T Features

* - N-Channel:30V 100A RDS(on)Typ= 3.2mΩ@VGS = 10 V RDS(on)Typ= 4.5mΩ@VGS =4.5 V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability G S D D-PAK D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS

SLD100N03T-Msemitek.pdf