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SLD100N03T - 30V N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - N-Channel:30V 100A RDS(on)Typ= 3.2mΩ@VGS = 10 V RDS(on)Typ= 4.5mΩ@VGS =4.5 V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability G S D D-PAK D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD R θJC TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche E.

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Datasheet Details

Part number SLD100N03T
Manufacturer Msemitek
File Size 1.07 MB
Description 30V N-Channel MOSFET
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Full PDF Text Transcription

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SLD100N03T SLD100N03T 30V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Application PWM Application Load Switch Power Management Features - N-Channel:30V 100A RDS(on)Typ= 3.2mΩ@VGS = 10 V RDS(on)Typ= 4.5mΩ@VGS =4.
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