SLD65R600E7

650V N-Channel MOSFET

Msemitek

SLD65R600E7 Features

* - 8A, 650V, RDS(onTyp =510mΩ@VGS = 10 V - Low gate charge(typ. Qg =10.1nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D D G D S TO-220F G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR E

SLD65R600E7 General Description

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD65R600E7 Datasheet (1.17 MB)

SLD65R600E7 Datasheet Preview — Preview of SLD65R600E7 PDF

Datasheet Details

Part number:

SLD65R600E7

Manufacturer:

Msemitek

File Size:

1.17 MB

Description:

650v n-channel mosfet.

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SLD65R600E7 650V N-Channel MOSFET Msemitek

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SLD65R600E7 Features

SLD65R600E7 General Description

Datasheet Details

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Description:

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