SLD65R600E7 Datasheet - Msemitek

SLD65R600E7 650V N-Channel MOSFET

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD65R600E7 Features

* - 8A, 650V, RDS(onTyp =510mΩ@VGS = 10 V - Low gate charge(typ. Qg =10.1nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D D G D S TO-220F G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR E

SLD65R600E7-Msemitek.pdf