SLD65R600E7 - 650V N-Channel MOSFET

Product Overview

Msemitek

Part number	SLD65R600E7
Manufacturer	Msemitek
File Size	1.17 MB
Description	650V N-Channel MOSFET
Datasheet	SLD65R600E7 Datasheet
Additional preview pages of the SLD65R600E7 datasheet.

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.

- 8A, 650V, RDS(onTyp =510mΩ@VGS = 10 V - Low gate charge(typ. Qg =10.1nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D D G D S TO-220F G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche.

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Published: Mar 15, 2025 |