SLD30L03A

N- and P-Channel MOSFET

Msemitek

SLD30L03A Features

* - N-Channel: 30V 25A RDS(on)Typ= 9mΩ@VGS = 10 V RDS(on))Typ= 13mΩ@VGS = 4..5V - P-Channel: -30V- 20A RDS(on))Typ= 23mΩ@VGS = -10 V RDS(on))Typ=34.5mΩ@VGS = -4.5V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability D1 D2 TO-252-4L G1 G

SLD30L03A General Description

This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Application  Battery Protectio.

SLD30L03A Datasheet (659.14 KB)

SLD30L03A Datasheet Preview — Preview of SLD30L03A PDF

Datasheet Details

Part number:

SLD30L03A

Manufacturer:

Msemitek

File Size:

659.14 KB

Description:

N- and p-channel mosfet.

📁 Related Datasheet

SLD30-018 TVS Diodes (Littelfuse)

SLD301B Block-type 100mW High Power Laser Diode (Sony Corporation)

SLD301V 100mW High Power Laser Diode (Sony Corporation)

SLD301WT 100mW HIGH POWER LASER DIODE (Sony Corporation)

SLD301XT 100mW High Power Laser Diode (Sony Corporation)

SLD302B Block-type 200mW High Power Laser Diode (Sony Corporation)

SLD302V 200mW High Power Laser Diode (Sony Corporation)

SLD302WT 200mW HIGH POWER LASER DIODE (Sony Corporation)

SLD302XT 200mW High Power Laser Diode (Sony Corporation)

SLD303B BLOCK-TYPE 500mW HIGH POWER LASER DIODE (Sony Corporation)

TAGS

SLD30L03A and P-Channel MOSFET Msemitek

Image Gallery

SLD30L03A Features

SLD30L03A General Description

Datasheet Details

File Size:

Description:

SLD30L03A Distributor