SLD30L03A Datasheet - Msemitek

SLD30L03A N- and P-Channel MOSFET

This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Application  Battery Protectio.

SLD30L03A Features

* - N-Channel: 30V 25A RDS(on)Typ= 9mΩ@VGS = 10 V RDS(on))Typ= 13mΩ@VGS = 4..5V - P-Channel: -30V- 20A RDS(on))Typ= 23mΩ@VGS = -10 V RDS(on))Typ=34.5mΩ@VGS = -4.5V - Very Low On-resistance RDS(ON) - Low Crss - Fast switching - 100% avalanche tested - Improved dv/dt capability D1 D2 TO-252-4L G1 G

SLD30L03A-Msemitek.pdf