SLD60R2K3SJ Datasheet, mosfet equivalent, Maple Semiconductor

SLD60R2K3SJ Features

• Mosfet - 2.3A, 600V, RDS(on) typ. = 2.3Ω@VGS = 10 V - Low gate charge ( typical 7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS

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Part number:

SLD60R2K3SJ

Manufacturer:

Maple Semiconductor

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627.86kb

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📄 Datasheet

Description:

N-channel mosfet. This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tai

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SLD60R2K3SJ

Maple Semiconductor

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