SLD60R2K3SJ Datasheet - Maple Semiconductor

SLD60R2K3SJ N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

SLD60R2K3SJ Features

* - 2.3A, 600V, RDS(on) typ. = 2.3Ω@VGS = 10 V - Low gate charge ( typical 7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD60R2K3SJ / SLU60R2K3

SLD60R2K3SJ-MapleSemiconductor.pdf