Datasheet Details
- Part number
- SLD60R2K3SJ
- Manufacturer
- Maple Semiconductor
- File Size
- 627.86 KB
- Datasheet
- SLD60R2K3SJ-MapleSemiconductor.pdf
- Description
- N-Channel MOSFET
SLD60R2K3SJ Description
SLD60R2K3SJ / SLU60R2K3SJ SLD60R2K3SJ / SLU60R2K3SJ 600V N-Channel MOSFET CB-FET General .
This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.
SLD60R2K3SJ Features
* - 2.3A, 600V, RDS(on) typ. = 2.3Ω@VGS = 10 V - Low gate charge ( typical 7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
GS
D-PAK
GDS
I-PAK
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLD60R2K3SJ / SLU60R2K3
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