SLD2N65UZ - N-Channel MOSFET

Product Overview

Maple Semiconductor

Part number	SLD2N65UZ
Manufacturer	Maple Semiconductor
File Size	909.27 KB
Description	N-Channel MOSFET
Datasheet	SLD2N65UZ Datasheet
Additional preview pages of the SLD2N65UZ datasheet.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 1.9A, 650V, RDS(on)typ = 3.45Ω@VGS = 10 V - Low gate charge ( typical 5.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLD2N65UZ / SLU2N65UZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (N.

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Published: Apr 11, 2017 |