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SLD2N65UZ

N-Channel MOSFET

SLD2N65UZ Features

* - 1.9A, 650V, RDS(on)typ = 3.45Ω@VGS = 10 V - Low gate charge ( typical 5.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLD2N65UZ / SLU2N65UZ

SLD2N65UZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD2N65UZ Datasheet (909.27 KB)

Preview of SLD2N65UZ PDF

Datasheet Details

Part number:

SLD2N65UZ

Manufacturer:

Maple Semiconductor

File Size:

909.27 KB

Description:

N-channel mosfet.

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SLD2N65UZ N-Channel MOSFET Maple Semiconductor

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