SLD11N40UZ

N-Channel MOSFET

Maple Semiconductor

SLD11N40UZ Features

* - 8.5A, 400V, RDS(on)typ. = 0.53Ω@VGS = 10 V - Low gate charge ( typical 15.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol VDSS ID IDM VGSS EAS IAR EAR dv

SLD11N40UZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD11N40UZ Datasheet (298.35 KB)

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Datasheet Details

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SLD11N40UZ

Manufacturer:

Maple Semiconductor

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298.35 KB

Description:

N-channel mosfet.

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SLD11N40UZ N-Channel MOSFET Maple Semiconductor

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SLD11N40UZ Features

SLD11N40UZ General Description

Datasheet Details

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