SLD4N70C

N-Channel MOSFET

Maple Semiconductor

SLD4N70C Features

* - 3A, 700V, RDS(on)typ. = 3.0Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD4N70C / SLU4N70C VDSS

SLD4N70C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD4N70C Datasheet (883.33 KB)

SLD4N70C Datasheet Preview — Preview of SLD4N70C PDF

Datasheet Details

Part number:

SLD4N70C

Manufacturer:

Maple Semiconductor

File Size:

883.33 KB

Description:

N-channel mosfet.

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SLD4N70C N-Channel MOSFET Maple Semiconductor

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SLD4N70C Features

SLD4N70C General Description

Datasheet Details

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Description:

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