Datasheet Details
- Part number
- SLD2N60UZ
- Manufacturer
- Maple Semiconductor
- File Size
- 900.85 KB
- Datasheet
- SLD2N60UZ-MapleSemiconductor.pdf
- Description
- N-Channel MOSFET
SLD2N60UZ Description
SLD2N60UZ / SLU2N60UZ SLD2N60UZ / SLU2N60UZ 600V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
SLD2N60UZ Features
* - 1.9A, 600V, RDS(on) = 4.5Ω@VGS = 10 V - Low gate charge ( typical 6.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability
D
D
GS
D-PAK
GDS
I-PAK
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted
S
Symbol
Parameter
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