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SLD2N60UZ

N-Channel MOSFET

SLD2N60UZ Features

* - 1.9A, 600V, RDS(on) = 4.5Ω@VGS = 10 V - Low gate charge ( typical 6.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter

SLD2N60UZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD2N60UZ Datasheet (900.85 KB)

Preview of SLD2N60UZ PDF

Datasheet Details

Part number:

SLD2N60UZ

Manufacturer:

Maple Semiconductor

File Size:

900.85 KB

Description:

N-channel mosfet.

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SLD2N60UZ N-Channel MOSFET Maple Semiconductor

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