SLD2N60UZ - N-Channel MOSFET

Product Overview

Maple Semiconductor

Part number	SLD2N60UZ
Manufacturer	Maple Semiconductor
File Size	900.85 KB
Description	N-Channel MOSFET
Datasheet	SLD2N60UZ Datasheet
Additional preview pages of the SLD2N60UZ datasheet.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 1.9A, 600V, RDS(on) = 4.5Ω@VGS = 10 V - Low gate charge ( typical 6.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLD2N60UZ / SLU2N60UZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC.

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Published: Apr 11, 2017 |