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SLD2N60UZ - N-Channel MOSFET

SLD2N60UZ Description

SLD2N60UZ / SLU2N60UZ SLD2N60UZ / SLU2N60UZ 600V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

SLD2N60UZ Features

* - 1.9A, 600V, RDS(on) = 4.5Ω@VGS = 10 V - Low gate charge ( typical 6.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability - ESD Improved capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter

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Datasheet Details

Part number
SLD2N60UZ
Manufacturer
Maple Semiconductor
File Size
900.85 KB
Datasheet
SLD2N60UZ-MapleSemiconductor.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Maple Semiconductor
Maple Semiconductor SLD2N60UZ-like datasheet