Datasheet Details
- Part number
- SLD4N60C
- Manufacturer
- Maple Semiconductor
- File Size
- 321.23 KB
- Datasheet
- SLD4N60C-MapleSemiconductor.pdf
- Description
- N-Channel MOSFET
SLD4N60C Description
SLD4N60C / SLU4N60C SLD4N60C / SLU4N60C 600V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
SLD4N60C Features
* - 4.5A, 600V, RDS(on) = 2.0Ω(typ)@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
GS
D-PAK
GDS
I-PAK
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLD4N60C / SLU4N60C
V
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