SLD4N60C - N-Channel MOSFET

Product Overview

Maple Semiconductor

Part number	SLD4N60C
Manufacturer	Maple Semiconductor
File Size	321.23 KB
Description	N-Channel MOSFET
Datasheet	SLD4N60C Datasheet
Additional preview pages of the SLD4N60C datasheet.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 4.5A, 600V, RDS(on) = 2.0Ω(typ)@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD4N60C / SLU4N60C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1).

📁 Similar Datasheet

Other Datasheets by Maple Semiconductor

Published: Apr 11, 2017 |