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SLD4N60C N-Channel MOSFET

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Description

SLD4N60C / SLU4N60C SLD4N60C / SLU4N60C 600V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

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Datasheet Specifications

Part number
SLD4N60C
Manufacturer
Maple Semiconductor
File Size
321.23 KB
Datasheet
SLD4N60C-MapleSemiconductor.pdf
Description
N-Channel MOSFET

Features

* - 4.5A, 600V, RDS(on) = 2.0Ω(typ)@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD4N60C / SLU4N60C V

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Maple Semiconductor SLD4N60C-like datasheet