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SLD4N65C

N-Channel MOSFET

SLD4N65C Features

* - 4.5A, 650V, RDS(on) = 2.5Ω(typ)@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD4N65C / SLU4N65C V

SLD4N65C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD4N65C Datasheet (322.02 KB)

Preview of SLD4N65C PDF

Datasheet Details

Part number:

SLD4N65C

Manufacturer:

Maple Semiconductor

File Size:

322.02 KB

Description:

N-channel mosfet.

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TAGS

SLD4N65C N-Channel MOSFET Maple Semiconductor

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