SLD11N35UZ

N-Channel MOSFET

Maple Semiconductor

SLD11N35UZ Features

* - 9A, 350V, RDS(on)typ = 0.38Ω@VGS = 10 V - Low gate charge ( typical 15nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLD11N35UZ / SLU11N35UZ

SLD11N35UZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLD11N35UZ Datasheet (945.66 KB)

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SLD11N35UZ

Manufacturer:

Maple Semiconductor

File Size:

945.66 KB

Description:

N-channel mosfet.

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SLD11N35UZ N-Channel MOSFET Maple Semiconductor

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SLD11N35UZ Features

SLD11N35UZ General Description

Datasheet Details

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