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SLD11N35UZ - N-Channel MOSFET

Product Overview

Maple Semiconductor

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SLD11N35UZ N-Channel MOSFET by Maple Semiconductor - Datasheet Preview — Datasheet preview – SLD11N35UZ

Datasheet Details

Part number	SLD11N35UZ
Manufacturer	Maple Semiconductor
File Size	945.66 KB
Description	N-Channel MOSFET
Datasheet	SLD11N35UZ Datasheet
Additional preview pages of the SLD11N35UZ datasheet.

Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

Features

- 9A, 350V, RDS(on)typ = 0.38Ω@VGS = 10 V - Low gate charge ( typical 15nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLD11N35UZ / SLU11N35UZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed.

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Published: Apr 11, 2017 |