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SLD11N35UZ - N-Channel MOSFET

SLD11N35UZ Description

SLD11N35UZ / SLU11N35UZ SLD11N35UZ / SLU11N35UZ 350V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

SLD11N35UZ Features

* - 9A, 350V, RDS(on)typ = 0.38Ω@VGS = 10 V - Low gate charge ( typical 15nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLD11N35UZ / SLU11N35UZ

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N-Channel MOSFET Maple Semiconductor
Maple Semiconductor SLD11N35UZ-like datasheet