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SLD65R2K6SJ

N-Channel MOSFET

SLD65R2K6SJ Features

* - 2.3A, 650V, RDS(on) typ. = 2.3Ω@VGS = 10 V - Low gate charge ( typical 7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD65R2K6SJ / SLU65R2K6

SLD65R2K6SJ General Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

SLD65R2K6SJ Datasheet (627.85 KB)

Preview of SLD65R2K6SJ PDF

Datasheet Details

Part number:

SLD65R2K6SJ

Manufacturer:

Maple Semiconductor

File Size:

627.85 KB

Description:

N-channel mosfet.

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SLD65R2K6SJ N-Channel MOSFET Maple Semiconductor

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