SLD65R2K6SJ - N-Channel MOSFET

Maple Semiconductor

SLD65R2K6SJ Description

SLD65R2K6SJ / SLU65R2K6SJ SLD65R2K6SJ / SLU65R2K6SJ 650V N-Channel MOSFET CB-FET General .
This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

SLD65R2K6SJ Features

* - 2.3A, 650V, RDS(on) typ. = 2.3Ω@VGS = 10 V - Low gate charge ( typical 7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD65R2K6SJ / SLU65R2K6

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Datasheet Details

Part number: SLD65R2K6SJ
Manufacturer: Maple Semiconductor
File Size: 627.85 KB
Datasheet: SLD65R2K6SJ-MapleSemiconductor.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET Maple Semiconductor

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