BD237 - Medium Power Transistors
Collector-Base Voltage Collector-Emitter Voltage Collector Emitter Voltage (RBE = 1K) Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation at Tc = 25°C Derate above 25°C Power Dissipation at Ta = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics
BD237 Features
* Epitaxial Silicon Power Transistors.
* Intended for Use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions A B C D E F G L M N P S Pin Configuration: 1. Emitter 2. Collector 3. Base Minimum Maximum 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.25 (Typical)
