Click to expand full text
MJ10021
Darlington Power Transistor
NPN silicon power darlington transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications.
Features:
• Continuous Collector Current - IC = 60A. • Switching regulators. • Inverters. • Solenoid and relay drivers. • AC and DC Motor controls.
Dimensions Minimum Maximum
Pin 1. Base 2. Emitter Collector(Case)
Maximum Ratings
A
38.75
39.96
B
19.28
22.23
C 7.96 9.28
D
11.18
12.19
E
25.20
26.67
F 0.92 1.09
G 1.38 1.62
H
29.90
30.40
I
16.64
17.30
J 3.88 4.36
K
10.67
11.
MJ10021 Datasheet
