NCE60D09AS Datasheet, Mosfet, NCE Power Semiconductor

NCE60D09AS Features

• Mosfet
• VDS = 60V,ID =9A RDS(ON) < 15mΩ @ VGS=10V (Typ:10mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

NCE60D09AS

Manufacturer:

NCE Power Semiconductor

File Size:

406.28kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE60D09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

NCE60D09AS Application

• Applications General Features
• VDS = 60V,ID =9A RDS(ON) < 15mΩ @ VGS=10V (Typ:10mΩ)
• High density cell design for ultra low Rd

TAGS

NCE60D09AS

NCE Power Semiconductor

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