Part number: NCE60NP2012K
Manufacturer: NCE Power Semiconductor
File Size: 405.87KB
Download: 📄 Datasheet
Description: N & P-Channel Enhancement Mode Power MOSFET
N channel
* VDS =60V,ID =20A RDS(ON) <35mΩ @ VGS=10V RDS(ON) <40mΩ @ VGS=4.5V
p channel
* VDS =-60V,ID =-12A RDS(ON) <100mΩ @ VGS=-10V RDS(ON) <125mΩ @ VGS=-4.5V
.
General Features N channel
* VDS =60V,ID =20A RDS(ON) <35mΩ @ VGS=10V RDS(ON) <40mΩ @ VGS=4.5V
p channel
* VDS.
The NCE60NP2012K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features N channel
* VDS =60V,ID =20A RDS(ON) <35mΩ @ VGS=10V RDS(ON) <40mΩ .
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