Part number: NCE60ND09AS
Manufacturer: NCE Power Semiconductor
File Size: 416.44KB
Download: 📄 Datasheet
Description: N-Channel Enhancement Mode Power MOSFET
* VDS = 60V,ID =9A RDS(ON) < 15mΩ @ VGS=10V RDS(ON) < 18mΩ @ VGS=10V
(Typ:10mΩ) (Typ:14mΩ)
Schematic diagram
* High density cell design for ultra low Rdson
General Features
* VDS = 60V,ID =9A RDS(ON) < 15mΩ @ VGS=10V RDS(ON) < 18mΩ @ VGS=10V
(Typ:10mΩ) (Typ:14mΩ)
Sche.
The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 60V,ID =9A RDS(ON) < 15mΩ @ VGS=10V RDS(ON) < 18mΩ @ VGS=10V.
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