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NCE60ND09AS - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE60ND09AS
Manufacturer	NCE Power Semiconductor
File Size	416.44 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE60ND09AS-NCEPowerSemiconductor.pdf

NCE60ND09AS Product details

Description

The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 60V,ID =9A RDS(ON) < 15mΩ @ VGS=10V RDS(ON) < 18mΩ @ VGS=10V (Typ:10mΩ) (Typ:14mΩ) Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses.

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Published: Jan 20, 2025 |