NCE60ND09AS - N-Channel Enhancement Mode Power MOSFET
NCE60ND09AS Features
* VDS = 60V,ID =9A RDS(ON) < 15mΩ @ VGS=10V RDS(ON) < 18mΩ @ VGS=10V (Typ:10mΩ) (Typ:14mΩ) Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Low gate to drain charge to reduce switching losses Application
