NCE6602 Datasheet, Mosfet, NCE Power Semiconductor

NCE6602 Features

  • Mosfet
  • N-Channel
  • VDS = 30V,ID = 3.5A RDS(ON) <58mΩ @ VGS=10V RDS(ON) < 95mΩ @ VGS=4.5V
  • P-Channel VDS = -30V,ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150mΩ

PDF File Details

Part number:

NCE6602

Manufacturer:

NCE Power Semiconductor

File Size:

436.96kb

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📄 Datasheet

Description:

N & p-channel enhancement mode power mosfet. The NCE6602 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Batte

Datasheet Preview: NCE6602 📥 Download PDF (436.96kb)
Page 2 of NCE6602 Page 3 of NCE6602

TAGS

NCE6602
P-Channel
Enhancement
Mode
Power
MOSFET
NCE Power Semiconductor

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