2SC2335 SILICON POWER TRANSISTOR

NEC

Description

www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

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Datasheet Specifications

Part number: 2SC2335
Manufacturer: NEC
File Size: 130.58 KB
Datasheet: 2SC2335_NEC.pdf
Description: SILICON POWER TRANSISTOR

Features

* Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A
* Fast switching speed: tf = 1.0 µs MAX. @IC = 3.0 A
* Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage C

Applications

* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v

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2SC2335 SILICON POWER TRANSISTOR NEC

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