2SC4187 - NPN SILICON EPITAXIAL TRANSISTOR

Product Overview

NEC

2SC4187 NPN SILICON EPITAXIAL TRANSISTOR by NEC - Datasheet Preview — Datasheet preview – 2SC4187

Datasheet Details

Part number	2SC4187
Manufacturer	NEC
File Size	43.24 KB
Description	NPN SILICON EPITAXIAL TRANSISTOR
Datasheet	2SC4187 Datasheet
Additional preview pages of the 2SC4187 datasheet.

Product details

Description

The 2SC4187 is designed primarily for use in low voltage and low current application up to UHF band. Low Noise : NF = 3.0 dB TYP. High Gain : |S21e|2 = 6.5 dB TYP.

Features

2 0.3 +0.1.
0 0.15 +0.1.
0.05 1 3 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 15 8 2 5 50 150.
65 to +150 V V V mA mW ˚ C ˚ C 0.9 ±0.1 0.3.

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Published: Mar 22, 2005 |