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2SC4187 NPN SILICON EPITAXIAL TRANSISTOR

2SC4187 Description

DATA SHEET SILICON TRANSISTOR 2SC4187 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD .
The 2SC4187 is designed primarily for use in low voltage and low current application up to UHF band.

2SC4187 Features

* 2 0.3 +0.1
* 0 0.15 +0.1
* 0.05 1 3 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 15 8 2 5 50 150
* 65 to +150 V V V mA mW ˚ C ˚

2SC4187 Applications

* and other battery powered systems. Super mini mold package makes it suitable for use in small type equipments such as HICs. PACKAGE DIMENSIONS in millimeters 2.1 ±0.1 1.25 ±0.1
* Low Noise : NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 µA, f = 1.0 GHz
* High Gain : |S21e|2 = 6.5 dB TYP.

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Datasheet Details

Part number
2SC4187
Manufacturer
NEC
File Size
43.24 KB
Datasheet
2SC4187_NEC.pdf
Description
NPN SILICON EPITAXIAL TRANSISTOR

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NPN SILICON EPITAXIAL TRANSISTOR NEC
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