2SC4188 Datasheet - Sanyo Semicon Device

2SC4188 NPN Epitaxial Planar Silicon Transistor

2SC4188 Features

* High breakdown voltage : VCEO≥200V.

* Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.3pF typ.

* Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4188] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 Specifications Absolute Maximum

Datasheet Details

2SC4188

Sanyo Semicon Device

155.98 KB

Npn epitaxial planar silicon transistor.

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