* a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES
* Low VCE(sat): VCE(sat) ≤ 0.3 V
* High hFE:
* On-chip dumper-diode
* Auto-mounting possible in radial taping specifications @IC = 1.5 A, IB = 1
2SC4814
NEC
161.58 KB
Npn silicon epitaxial transistor.
DATA SHEET
SILICON POWER TRANSISTOR
2SC4814
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4814 is a power transistor featuring l.
📁 Related Datasheet
2SC4810 - NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
DATA SHEET
DARLINGTON POWER TRANSISTOR
2SC4810
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
The 2SC4810 is a h.
2SC4811 - NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
DATA SHEET
DARLINGTON POWER TRANSISTOR
2SC4811
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
The 2SC4811 is a h.
2SC4813 - NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
DATA SHEET
SILICON POWER TRANSISTOR
2SC4813
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4813 is a power transistor developed f.
2SC4815 - NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
DATA SHEET
SILICON POWER TRANSISTOR
2SC4815
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4815 is a power transistor developed f.
2SC4800 - (2SC4800 - 2SC4803) Power Bipolar Transistors
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2SC4802 - (2SC4800 - 2SC4803) Power Bipolar Transistors
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