* low VCE(sat) and high hFE. This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost reduction. FEATURES
* High hFE and low VCE(sat): VCE(sat) ≤ 0.3 V
2SC4815
NEC
166.00 KB
Npn silicon epitaxial transistor.
DATA SHEET
SILICON POWER TRANSISTOR
2SC4815
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4815 is a power transistor developed f.
📁 Related Datasheet
2SC4810 - NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
DATA SHEET
DARLINGTON POWER TRANSISTOR
2SC4810
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
The 2SC4810 is a h.
2SC4811 - NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
DATA SHEET
DARLINGTON POWER TRANSISTOR
2SC4811
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
The 2SC4811 is a h.
2SC4813 - NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
DATA SHEET
SILICON POWER TRANSISTOR
2SC4813
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4813 is a power transistor developed f.
2SC4814 - NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
DATA SHEET
SILICON POWER TRANSISTOR
2SC4814
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4814 is a power transistor featuring l.
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